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Power MOSFET SOIC-8

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    MPN SIR872ADP-T1-GE3
    Mfr. Vishay
    Oneyac # A-SIR872ADP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drive voltage @ Rds On (Max), Rds On (Min) 7.5V,10V
    Vgs (th) at different IDs (maximum value) 4.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 47nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1286pF @ 75V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    Continuous drain current Id 53.7A
    Pd power dissipation (Max) 104W
    QG gate charge 31.3nC
    Rds On(Max)@Id,Vgs 18mΩ
    Drain source voltage Vds 150V
    Gate voltage Vgs 2.5V
    rise time 12ns
    Descent time 7ns
    Typical shutdown delay time 15ns
    Typical connection delay time 10ns
    Forward transconductance - minimum value 30S
    Series SIR
    Number of channels 1Channel
    to configure Single
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